Talks and Poster Presentations (with Proceedings-Entry):
K. Schneider-Hornstein, M. Hofbauer, B. Steindl, H. Zimmermann:
"Fully Integrated Actively Quenched SPAD in 0.18µm CMOS Technology";
Talk: Austrochip,
Wien;
10-07-2020; in: "2020 Austrochip Workshop on Microelectronics",
(2020),
ISBN: 978-1-7281-8493-7;
4 pages.
English abstract:
A fully integrated single- photon avalanche diode(SPAD)in a 180nm high voltage CMOS technology is presented. The introduced quenching circuit is realized by the 3.3V high voltage transistors of the process to increase the excess bias voltage Vex above the usual 1.8V supply voltage of the 180nm CMOS technology. Furthermore the circuit is cascoded to increase the excess bias even more up to 6.6V.
Keywords:
SPAD, optical receiver, CMOA, active quenching
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/Austrochip51129.2020.9232991
Created from the Publication Database of the Vienna University of Technology.