Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
S. S. Kohneh Poushi, H. Mahmoudi, B. Steindl, M. Hofbauer, H. Zimmermann:
"Comprehensive Modeling of Photon DetectionProbability in CMOS-based SPADs";
Vortrag: IEEE Conference on Sensors,
Rotterdam, Netherlands;
25.10.2020
- 28.10.2020; in: "IEEE Sensors 2020",
(2020),
Paper-Nr. 6237,
4 S.
Kurzfassung englisch:
Due to high sensivity and CMOS compatibility, the single-photon avalanche diode (SPAD)is a promising optical detector in many applications. The sensitivity of a SPAD described by photon detection propability is a ke parameter to be investigated. This paper presents a comprehensive model to characterize the photon detection probability of CMOS-implemented SPADs in technologies where an anti-reflection coating layer is not available. The model can accurately capture optical, photon absorption, and avalanche triggering effects. The obtained simulation results show a good agreement to our experimental evaluations and, therefore. the model can be reliably used to characterize the detection efficieny of CMOS SPADs for accurate device simulation and optimization.
Schlagworte:
Single-photon avalanche diode (SPAD), Photon detection probability (PDP), Anti-reflection coating (ARC)
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.