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M. Hofbauer, B. Steindl, K. Schneider-Hornstein, H. Zimmermann:
"Performance of high-voltage CMOS single-photon avalanche diodes with and without well-modulation technique";
Optical Engineering, Vol. 59 (2020), No. 4; S. 040502-1 - 040502-8.

We investigate single-photon avalanche diodes with a thick absorption zone leadingto a high photon detection probability in the near-infrared spectrum, e.g., to 27.9% at 850 nm.
Furthermore, modulation doping for tuning the breakdown voltage in single-photon avalanchediodes is used. Modulation doping allows for reduction of the effective doping in the structureduring the design phase without process modifications. We compare a modulation doped versionwith a single-photon avalanche diode not using this technique. We prove that both versions areoperational. The modulation doped version shows a reduced dark count rate and afterpulsingprobability at the cost of a reduced photon detection probability.

single-photon avalanche diode; optoelectronic integrated circuits; modulation dop- ing; photodetectors; adjustable breakdown voltage

http://dx.doi.org/10.1117/1.OE.59.4.040502