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R. Enne, M. Hofbauer, H. Zimmermann:
"Fast Cascoded Quenching Circuit for Decreasing Afterpulsing Effects in 0.35-µ CMOS";
IEEE Solid-State Circuits Letters, Vol. 1 (2018), No. 3; S. 62 - 65.

In this letter, we present a fully integrated single-photon avalanche diode (SPAD) using a fast cascoded quenching circuit (QC) fabricated in a 0.35-µm CMOS process. The QC features a fast active quenching time of only 0.48 ns and an adjustable total dead time (9.5-17 ns) to further reduce afterpulsing effects. To prove the quenching performance, the circuit was integrated together with a large-area SPAD having an active diameter of 80 µm. Experimental verification of reduction of afterpulsing with early quenching is shown. Thus, a minimal afterpulsing probability of 0.9% was measured at 6.6 V excess bias and a photon detection probability of 22% at a wavelength of 850 nm was achieved.

Avalanche photodiodes (APDs), CMOS technology, optical receiver, photon countin, quenching cirucit (QC), single-photon avalanche diode (SPAD)

http://dx.doi.org/10.1109/LSSC.2018.2827881