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B. Goll, M. Hofbauer, B. Steindl, H. Zimmermann:
"Transient Response of a 0.35μm CMOS SPAD with Thick Absorption Zone";
Vortrag: IEEE International Conference on Electronics, Circuits and Systems ICECS, Bordeaux, France; 09.12.2018 - 12.12.2018; in: "2018 25^th IEEE International Conference on Electronics Circuits and Sysems", (2018), ISBN: 978-1-5386-4089-0; S. 9 - 12.

A silicon Single-Photon-Avalanche-Diode (SPAD) with 50μm diameter and 28.7V breakdown voltage was bonded to an integrated gating circuit (gater) to determine the avalanche transient experimentally at 25°C. The gater was clocked with 15MHz and avalanche pulses were measured with a fast active picoprobe. For an excess bias of 5.1V a mean fall time (of the cathode potential from 80% to 20%) of 10.3ns (σ =0.67ns) was obtained for photons from a halogen light source. The gater consists of cascode switches to achieve excess bias voltages up to 6.6V. Gater and SPAD were fabricated in the same 3.3V/0.35μm CMOS technology.

SPAD; gating circuit; CMOS; avalanche transient