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Publications in Scientific Journals:

T. Jukic, P. Brandl, H. Zimmermann:
"Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies";
International Society of Optical Engineering (SPIE), Vol. 57 (2018), No. 4; 044101-1 - 044101-5.



English abstract:
The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

Keywords:
avalanche photodiodes; excess noise; impact ionization; ionization coefficients


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1117/1.OE.57.4.044101


Created from the Publication Database of the Vienna University of Technology.