Vorträge und Posterpräsentationen (ohne Tagungsband-Eintrag):
D. But, N. Dyakonova, D. Coquillat, A. Gutin, M. Sakhno, M. Shur, F. Sizov, W. Knap:
"THz and Sub-THz Frequency Range Detector based on Field Effect Transistors";
Vortrag: 5th Workshop of the Radio Frequency Engineering Working Group of the Austrian Research Association (ARGE-HFT),
Wien;
28.09.2017
- 29.09.2017.
Kurzfassung englisch:
Nanometer size field effect transistors (FETs) can operate as efficient resonant or broadband THz detectors, mixers, and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning THz detection related to plasma nonlinearities in FETs. The FETs can be used as a THz detector in CW and pulsed regime. In particular, the physical limits of the responsivity, the temperature dependences, speed and the dynamic range of these detectors are discussed. As a conclusion, applications of the FET THz detectors will be presented.
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.