[Zurück]

D. But, N. Dyakonova, D. Coquillat, A. Gutin, M. Sakhno, M. Shur, F. Sizov, W. Knap:
"THz and Sub-THz Frequency Range Detector based on Field Effect Transistors";
Vortrag: 5^th Workshop of the Radio Frequency Engineering Working Group of the Austrian Research Association (ARGE-HFT), Wien; 28.09.2017 - 29.09.2017.

Nanometer size field effect transistors (FETs) can operate as efficient resonant or broadband THz detectors, mixers, and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning THz detection related to plasma nonlinearities in FETs. The FETs can be used as a THz detector in CW and pulsed regime. In particular, the physical limits of the responsivity, the temperature dependences, speed and the dynamic range of these detectors are discussed. As a conclusion, applications of the FET THz detectors will be presented.