[Zurück]

M. Mitrovic, M. Hofbauer, B. Goll, K. Schneider-Hornstein, R. Swoboda, B. Steindl, K.O. Voss, H. Zimmermann:
"Experimental Investigation of Single-Event Transient Waveforms Depending on Transistor Spacing and Charge Sharing in 65-nm CMOS";
IEEE Transactions on Nuclear Science, Vol. 64 (2017), No. 8; S. 2136 - 2143.

Single-event cross sections of four inverter chains, with uniform inverter spacing ranging from 120 nm to 4µm, were experimentally measured and compared. These inverter chains wre irradiated using a focused ion beam. Full analog waveforms of responses were sensed using on-chip wide-bandwidth analog multiplexers. Cross sections are examined with respect to pulse heights and pulse widths, for direct-hit waveforms as well as for waveforms propagated through the chain. The influence of ion hit position and charge sharing effects on the initial shape and propagation of the single-event transients (SETs) was analyzed. We have observed a considerable reduction of cross section for tightly spaced inverters, for both direct hits and propagated SETs.

Analog on-chip measurement, charge sharing, CMOS, heavy ions, single-event effects (SEEs), single-event transient (SET)

http://dx.doi.org/10.1109/TNS.2017.2672820