Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):
P. Singerl, C. Fager, W. Ziming, Ch. Schuberth, F. Dielacher:
"A highly efficient 1-GHz, 15-W power amplifier design based on a 50-V LDMOS transistor";
Vortrag: IEEE MTT-S International Microwave Symposium,
Anaheim, CA, USA;
23.05.2010
- 28.05.2010; in: "Microwave Symposium Digest (MTT) 2010",
(2010),
ISBN: 978-1-4244-6056-4;
S. 1102
- 1105.
Kurzfassung englisch:
We present a 15-W, 1-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-paramter measurements of the packaged LDMOS device. A good agreement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure.
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.