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Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):

G. Meinhardt, J. Kraft, B. Löffler, H. Enichlmair, G. Röhrer, E. Wachmann, M. Schrems, R. Swoboda, C. Seidl, H. Zimmermann:
"High-speed blue-, red-, and infrared-sensitive photodiode integrated in a 0.35 µm SiGe:C-BiCMOS process";
Vortrag: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 05.12.2005 - 07.12.2005; in: "iedm Technical Digest", 05CH37703 (2005), ISBN: 0-7803-9268-x; S. 33.4.1 - 33.4,4.



Kurzfassung englisch:
A monolithically integrated photodiode with SiGe:C anode which exhibits an excellent spectral responsivity of typically 0.21/0.42/0.53 A/w at 410/660/785nm and sub-ns rise/fall times, fabricated without process modification is presented. the bandwidth of the photodiode exceeds 1300/490/260MHz at 410/660/785nm favoring this device for universal optical storage application. By applying a reverse bias voltage up to 10 V the photodiode features responsivities up to 0.6 A/W for 410nm due to avalanche multiplication.


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Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.