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Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):

A. Nemecek, K. Oberhauser, G. Zach, H. Zimmermann:
"Fast and efficient integrated silicon PIN-finger photodetector from ultraviolet up to near infrared";
Poster: International Conference on Group IV Photonics, Antwerpen, Belgium; 21.09.2005 - 23.09.2005; in: "2nd International Conference on Group IV Photonics", 05EX1053C (2005), ISBN: 0-7803-9071-7; Paper-Nr. P20, 3 S.



Kurzfassung englisch:
Results of an integrated silicon PIN-photodetector with structured anode fingers are presented. As an improvement to homogenous photodiodes, a structured detector for the visible range with anode fingers is shown. A PIN-design was realized to speed up the detector, avoiding slow carrier diffusion: the p+ doped finger-anode is arranged in a thick n- low doped intrinsic region placed inside an n+ doped region. Due to this setup and a thick intrinsic region, a responsivity of R=0.25A/W (0.43A/W) at a wavelength of 410nm (660nm) could be reached. The achieved bandwith of the detector in the visible range is up to 3GHz. The photodiode was realized in a modified 0.5μm BiCMOS process.


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