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R. Swoboda, H. Zimmermann:
"A 2.5-Gb/s Receiver OEIC in 0.6-μm BiCMOS Technology";
IEEE Photonics Technology Letters, vol. 16, issue 7 (2004), 1730 - 1732.

A monolithically integrated optical receiver circuit in a 0.6-μm silicon bipolar complementary metal oxide semiconductor technology with f_t = 25 GHz is presented. It incorporates a vertical p-i-n photodetector with a responsivity of 0.36 and 0.26 A/W at 660 and 850 nm, respectively. At these wavelengths, sensitivities of -23.5 and -21.2 dBm, respectively, at a bit rate of 2.5 Gb/s and a bit-error rate of 10^-9 are achieved. The transimpedance gain of the receiver is 18 kΩ and overall -3-dB bandwidths of 1.35 and 1.05 GHz at 660 and 850 nm, respectively, are observed.

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